PC
Rochester Electronics, LLCTO-263-7, D²Pak (6 Leads + Tab)RoHS

FDB0170N607L

MOSFET N-CH 60V 300A TO263-7

FDB0170N607L by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-7, D²Pak (6 Leads + Tab)

Series

PowerTrench®

Status

Active

$2.22 / unit (market reference)

MOQ: 136 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDB0170N607L
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)1.4mOhm @ 39A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)243 nC @ 10 V
Input Capacitance (Ciss)19250 pF @ 30 V
Power Dissipation (Max)3.8W (Ta), 250W (Tc)
Drive Voltage10V
Supplier Device PackageTO-263-7
RoHSRoHS
Part StatusActive

Application & Notes

FDB0170N607L by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.4mOhm @ 39A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs1.4mOhm @ 39A, 10V
Power Dissipation (Max)3.8W (Ta), 250W (Tc)
Gate Charge (Qg) (Max) @ Vgs243 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds19250 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C300A (Tc)

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