onsemiTO-3P-3, SC-65-3RoHS
FDA16N50
MOSFET N-CH 500V 16.5A TO3PN
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-3P-3, SC-65-3
Series
UniFET™
Status
Obsolete
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | FDA16N50 |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Rds On (Max) | 380mOhm @ 8.3A, 10V |
| Vgs(th) (Max) | 5V @ 250µA |
| Gate Charge (Qg) | 45 nC @ 10 V |
| Input Capacitance (Ciss) | 1945 pF @ 25 V |
| Power Dissipation (Max) | 205W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-3PN |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FDA16N50 by onsemi is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 380mOhm @ 8.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FDA16N50
Alternatives & Replacements
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FQA10N80
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FQA10N60C
MOSFET N-CH 600V 10A TO3P
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 380mOhm @ 8.3A, 10V |
| Power Dissipation (Max) | 205W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 45 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1945 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 16.5A (Tc) |
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