Diodes Incorporated3-UFDFNRoHS
DMP58D0LFB-7
MOSFET P-CH 50V 180MA 3DFN
Category
Subcategory
Transistors Fets Mosfets Single
Package
3-UFDFN
Status
Active
$0.45 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMP58D0LFB-7 |
| Package / Case | 3-UFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 50 V |
| Rds On (Max) | 8Ohm @ 100mA, 5V |
| Vgs(th) (Max) | 2.1V @ 250µA |
| Input Capacitance (Ciss) | 27 pF @ 25 V |
| Power Dissipation (Max) | 470mW (Ta) |
| Drive Voltage | 2.5V, 5V |
| Supplier Device Package | X1-DFN1006-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMP58D0LFB-7 by Diodes Incorporated is an N-channel power MOSFET rated at 50 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-UFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 8Ohm @ 100mA, 5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2.1V @ 250µA |
| Rds On (Max) @ Id, Vgs | 8Ohm @ 100mA, 5V |
| Power Dissipation (Max) | 470mW (Ta) |
| Drain to Source Voltage (Vdss) | 50 V |
| Input Capacitance (Ciss) (Max) @ Vds | 27 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 5V |
| Current - Continuous Drain (Id) @ 25°C | 180mA (Ta) |
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