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Diodes Incorporated3-UFDFNRoHS

DMN2005LPK-7

MOSFET N-CH 20V 440MA 3DFN

DMN2005LPK-7 by Diodes Incorporated
Subcategory

Transistors Fets Mosfets Single

Package

3-UFDFN

Status

Active

$0.51 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandDiodes Incorporated
ModelDMN2005LPK-7
Package / Case3-UFDFN
Mounting TypeSurface Mount
Operating Temperature-65°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)20 V
Rds On (Max)1.5Ohm @ 10mA, 4V
Vgs(th) (Max)1.2V @ 100µA
Power Dissipation (Max)450mW (Ta)
Drive Voltage1.5V, 4V
Supplier Device PackageX1-DFN1006-3
RoHSRoHS
Part StatusActive

Application & Notes

DMN2005LPK-7 by Diodes Incorporated is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-UFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1.5Ohm @ 10mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±10V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id1.2V @ 100µA
Rds On (Max) @ Id, Vgs1.5Ohm @ 10mA, 4V
Power Dissipation (Max)450mW (Ta)
Drain to Source Voltage (Vdss)20 V
Drive Voltage (Max Rds On, Min Rds On)1.5V, 4V
Current - Continuous Drain (Id) @ 25°C440mA (Ta)

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