DMN65D8LFB-7
MOSFET N-CH 60V 260MA 3DFN
Transistors Fets Mosfets Single
3-UFDFN
Active
$0.36 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DMN65D8LFB-7 |
| Package / Case | 3-UFDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 3Ohm @ 115mA, 10V |
| Vgs(th) (Max) | 2V @ 250µA |
| Input Capacitance (Ciss) | 25 pF @ 25 V |
| Power Dissipation (Max) | 430mW (Ta) |
| Drive Voltage | 5V, 10V |
| Supplier Device Package | X1-DFN1006-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DMN65D8LFB-7 by Diodes Incorporated is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 3-UFDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3Ohm @ 115mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DMN65D8LFB-7
Alternatives & Replacements
View All →DMN21D2UFB-7B
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DMN62D0LFB-7
MOSFET N-CH 60V 100MA 3DFN
DMP21D0UFB-7
MOSFET P-CH 20V 770MA 3DFN
DMN2400UFB-7
MOSFET N-CH 20V 750MA 3DFN
DMN2005LPK-7
MOSFET N-CH 20V 440MA 3DFN
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 3Ohm @ 115mA, 10V |
| Power Dissipation (Max) | 430mW (Ta) |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 25 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 260mA (Ta) |
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