CSD19538Q2
MOSFET N-CH 100V 14.4A 6WSON
Transistors Fets Mosfets Single
6-WDFN Exposed Pad
NexFET™
Active
$0.72 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD19538Q2 |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 59mOhm @ 5A, 10V |
| Vgs(th) (Max) | 3.8V @ 250µA |
| Gate Charge (Qg) | 5.6 nC @ 10 V |
| Input Capacitance (Ciss) | 454 pF @ 50 V |
| Power Dissipation (Max) | 2.5W (Ta), 20.2W (Tc) |
| Drive Voltage | 6V, 10V |
| Supplier Device Package | 6-WSON (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD19538Q2 by Texas Instruments is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 59mOhm @ 5A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD19538Q2
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.8V @ 250µA |
| Rds On (Max) @ Id, Vgs | 59mOhm @ 5A, 10V |
| Power Dissipation (Max) | 2.5W (Ta), 20.2W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 5.6 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 454 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 6V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 14.4A (Ta) |
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