CSD17318Q2T
MOSFET N-CHANNEL 30V 25A 6WSON
Transistors Fets Mosfets Single
6-WDFN Exposed Pad
NexFET™
Active
$1.15 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Texas Instruments |
| Model | CSD17318Q2T |
| Package / Case | 6-WDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 15.1mOhm @ 8A, 8V |
| Vgs(th) (Max) | 1.2V @ 250µA |
| Gate Charge (Qg) | 6 nC @ 4.5 V |
| Input Capacitance (Ciss) | 879 pF @ 15 V |
| Power Dissipation (Max) | 16W (Tc) |
| Drive Voltage | 2.5V, 8V |
| Supplier Device Package | 6-WSON (2x2) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
CSD17318Q2T by Texas Instruments is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-WDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 15.1mOhm @ 8A, 8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for CSD17318Q2T
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±10V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 1.2V @ 250µA |
| Rds On (Max) @ Id, Vgs | 15.1mOhm @ 8A, 8V |
| Power Dissipation (Max) | 16W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 6 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 879 pF @ 15 V |
| Drive Voltage (Max Rds On, Min Rds On) | 2.5V, 8V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tc) |
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