PC
Rochester Electronics, LLCTO-263-7, D²Pak (6 Leads + Tab)RoHS

BUK9C10-55BIT/A,11

MOSFET N-CH 55V 75A D2PAK-7

BUK9C10-55BIT/A,11 by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-7, D²Pak (6 Leads + Tab)

Series

TrenchPLUS

Status

Obsolete

$0.67 / unit (market reference)

MOQ: 451 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelBUK9C10-55BIT/A,11
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)55 V
Rds On (Max)9mOhm @ 10A, 10V
Vgs(th) (Max)2V @ 1mA
Gate Charge (Qg)51 nC @ 5 V
Input Capacitance (Ciss)4667 pF @ 25 V
Power Dissipation (Max)194W (Ta)
Drive Voltage4.5V, 10V
Supplier Device PackageD2PAK-7
RoHSRoHS
Part StatusObsolete

Application & Notes

BUK9C10-55BIT/A,11 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 9mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±15V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2V @ 1mA
Rds On (Max) @ Id, Vgs9mOhm @ 10A, 10V
Power Dissipation (Max)194W (Ta)
Gate Charge (Qg) (Max) @ Vgs51 nC @ 5 V
Drain to Source Voltage (Vdss)55 V
Input Capacitance (Ciss) (Max) @ Vds4667 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C75A (Ta)

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