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Nexperia USA Inc.6-UDFN Exposed PadRoHS

BUK6D210-60EX

MOSFET N-CH 60V 2.1A/5.7A 6DFN

BUK6D210-60EX by Nexperia USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

6-UDFN Exposed Pad

Series

Automotive, AEC-Q101

Status

Active

$0.43 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

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Parameters

ParameterValue
BrandNexperia USA Inc.
ModelBUK6D210-60EX
Package / Case6-UDFN Exposed Pad
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)60 V
Rds On (Max)210mOhm @ 2.1A, 10V
Vgs(th) (Max)2.7V @ 250µA
Gate Charge (Qg)3.8 nC @ 10 V
Input Capacitance (Ciss)110 pF @ 30 V
Power Dissipation (Max)2W (Ta), 15W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageDFN2020MD-6
RoHSRoHS
Part StatusActive

Application & Notes

BUK6D210-60EX by Nexperia USA Inc. is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 210mOhm @ 2.1A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.7V @ 250µA
Rds On (Max) @ Id, Vgs210mOhm @ 2.1A, 10V
Power Dissipation (Max)2W (Ta), 15W (Tc)
Gate Charge (Qg) (Max) @ Vgs3.8 nC @ 10 V
Drain to Source Voltage (Vdss)60 V
Input Capacitance (Ciss) (Max) @ Vds110 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C2.1A (Ta), 5.7A (Tc)

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