PC
Infineon TechnologiesTO-263-7, D²Pak (6 Leads + Tab)RoHS

AUIRFS4115-7P

MOSFET N-CH 150V 105A D2PAK

AUIRFS4115-7P by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-7, D²Pak (6 Leads + Tab)

Series

HEXFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelAUIRFS4115-7P
Package / CaseTO-263-7, D²Pak (6 Leads + Tab)
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)150 V
Rds On (Max)11.8mOhm @ 63A, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)110 nC @ 10 V
Input Capacitance (Ciss)5320 pF @ 50 V
Power Dissipation (Max)380W (Tc)
Drive Voltage10V
Supplier Device PackageD2PAK (7-Lead)
RoHSRoHS
Part StatusObsolete

Application & Notes

AUIRFS4115-7P by Infineon Technologies is an N-channel power MOSFET rated at 150 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-7, D²Pak (6 Leads + Tab) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 11.8mOhm @ 63A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs11.8mOhm @ 63A, 10V
Power Dissipation (Max)380W (Tc)
Gate Charge (Qg) (Max) @ Vgs110 nC @ 10 V
Drain to Source Voltage (Vdss)150 V
Input Capacitance (Ciss) (Max) @ Vds5320 pF @ 50 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C105A (Tc)

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