2SK2729-E
MOSFET N-CH 500V 20A TO3P
Transistors Fets Mosfets Single
TO-3P-3, SC-65-3
Active
$4.77 / unit (market reference)
MOQ: 63 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2SK2729-E |
| Package / Case | TO-3P-3, SC-65-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 500 V |
| Rds On (Max) | 290mOhm @ 10A, 10V |
| Vgs(th) (Max) | 3.5V @ 1mA |
| Gate Charge (Qg) | 55 nC @ 10 V |
| Input Capacitance (Ciss) | 3300 pF @ 10 V |
| Power Dissipation (Max) | 150W (Ta) |
| Supplier Device Package | TO-3P |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
2SK2729-E by Rochester Electronics, LLC is an N-channel power MOSFET rated at 500 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-3P-3, SC-65-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 290mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SK2729-E
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 290mOhm @ 10A, 10V |
| Power Dissipation (Max) | 150W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 55 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 500 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3300 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Ta) |
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