ZXTP56060FDBQ-7
SS LOW SAT TRANSISTOR U-DFN2020-
Transistors Bipolar Bjt Arrays
6-UDFN Exposed Pad
Automotive, AEC-Q101
Active
$0.49 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | ZXTP56060FDBQ-7 |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 510mW |
| Supplier Device Package | U-DFN2020-6 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
ZXTP56060FDBQ-7 by Diodes Incorporated is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for ZXTP56060FDBQ-7
Alternatives & Replacements
View All →PBSS4160PANPSX
TRANS NPN/PNP 60V 1A DFN2020D-6
PBSS5255PAPSX
TRANS 2PNP 55V 2A DFN2020D-6
DSS45160FDB-7
TRANS NPN/PNP 1A 60V U-DFN2020-6
DSS4160FDB-7
TRANS NPH U-DFN2020-6
PBSS4260PANPSX
TRANS NPN/PNP 60V 2A DFN2020D-6
PBSS4220PANSX
TRANS 2NPN 20V 2A DFN2020D-6
All Technical Specifications
| Power - Max | 510mW |
| Transistor Type | 2 PNP (Dual) |
| Vce Saturation (Max) @ Ib, Ic | 450mV @ 200mA, 2A |
| Current - Collector (Ic) (Max) | 2A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 170 @ 100mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
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