Diodes Incorporated6-UDFN Exposed PadRoHS
DSS45160FDB-7
TRANS NPN/PNP 1A 60V U-DFN2020-6
Category
Subcategory
Transistors Bipolar Bjt Arrays
Package
6-UDFN Exposed Pad
Status
Active
Datasheet
$0.64 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Diodes Incorporated |
| Model | DSS45160FDB-7 |
| Package / Case | 6-UDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 405mW |
| Supplier Device Package | U-DFN2020-6 (Type B) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DSS45160FDB-7 by Diodes Incorporated is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 6-UDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DSS45160FDB-7
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All Technical Specifications
| Power - Max | 405mW |
| Transistor Type | NPN, PNP |
| Frequency - Transition | 175MHz, 65MHz |
| Vce Saturation (Max) @ Ib, Ic | 240mV @ 50mA, 1A, 550mV @ 50mA, 1A |
| Current - Collector (Ic) (Max) | 1A |
| Current - Collector Cutoff (Max) | 100nA (ICBO) |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 150 @ 500mA, 2V / 120 @ 500mA, 2V |
| Voltage - Collector Emitter Breakdown (Max) | 60V |
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