SILICON CARBIDE SCHOTTKY DIODE
Diodes Rectifiers Single
4-VDFN Exposed Pad
Active
$3.78 / unit (market reference)
MOQ: 1 pcs
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| Parameter | Value |
|---|---|
| Brand | WeEn Semiconductors |
| Model | WNSC12650T6J |
| Package / Case | 4-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (8x8) |
| RoHS | RoHS |
| Part Status | Active |
WNSC12650T6J by WeEn Semiconductors is a commonly used electronic component in the Diodes Rectifiers Single category. Available in 4-VDFN Exposed Pad package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.
SILICON CARBIDE SCHOTTKY DIODE
SILICON CARBIDE SCHOTTKY DIODE
SILICON CARBIDE SCHOTTKY DIODE
SILICON CARBIDE SCHOTTKY DIODE
SILICON CARBIDE POWER DIODE
SILICON CARBIDE POWER DIODE
| Speed | No Recovery Time > 500mA (Io) |
| Diode Type | Silicon Carbide Schottky |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 12A |
| Operating Temperature - Junction | 175°C |
| Voltage - Forward (Vf) (Max) @ If | 1.8 V @ 12 A |
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