WeEn Semiconductors4-VDFN Exposed PadRoHS
WNSC10650T6J
SILICON CARBIDE POWER DIODE
Category
Subcategory
Diodes Rectifiers Single
Package
4-VDFN Exposed Pad
Status
Active
$3.78 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | WeEn Semiconductors |
| Model | WNSC10650T6J |
| Package / Case | 4-VDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Supplier Device Package | 5-DFN (8x8) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
WNSC10650T6J by WeEn Semiconductors is a commonly used electronic component in the Diodes Rectifiers Single category. Available in 4-VDFN Exposed Pad package with standard temperature range operating temperature range. Contact us for datasheet, pricing, and availability.
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All Technical Specifications
| Speed | No Recovery Time > 500mA (Io) |
| Diode Type | Silicon Carbide Schottky |
| Capacitance @ Vr, F | 328pF @ 1V, 1MHz |
| Reverse Recovery Time (trr) | 0 ns |
| Current - Reverse Leakage @ Vr | 60 µA @ 650 V |
| Voltage - DC Reverse (Vr) (Max) | 650 V |
| Current - Average Rectified (Io) | 10A |
| Operating Temperature - Junction | 175°C (Max) |
| Voltage - Forward (Vf) (Max) @ If | 1.7 V @ 10 A |
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