Vishay General Semiconductor - Diodes DivisionDual INT-A-PAK (4 + 8)RoHS
VS-GT300FD060N
IGBT MOD 600V 379A INT-A-PAK
Category
Subcategory
Transistors Igbts Modules
Package
Dual INT-A-PAK (4 + 8)
Status
Active
$670.54 / unit (market reference)
MOQ: 12 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-GT300FD060N |
| Package / Case | Dual INT-A-PAK (4 + 8) |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175°C (TJ) |
| Power Dissipation (Max) | 1250 W |
| Supplier Device Package | Dual INT-A-PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
VS-GT300FD060N by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Dual INT-A-PAK (4 + 8) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input | Standard |
| IGBT Type | Trench Field Stop |
| Power - Max | 1250 W |
| Configuration | Three Level Inverter |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 2.5V @ 15V, 300A |
| Current - Collector (Ic) (Max) | 379 A |
| Input Capacitance (Cies) @ Vce | 23.3 nF @ 30 V |
| Current - Collector Cutoff (Max) | 250 µA |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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