PC
Rochester Electronics, LLCEPM7RoHS

FP7G75US60

IGBT

FP7G75US60 by Rochester Electronics, LLC
Subcategory

Transistors Igbts Modules

Package

EPM7

Series

Power-SPM™

Status

Obsolete

$29.63 / unit (market reference)

MOQ: 11 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFP7G75US60
Package / CaseEPM7
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 125°C (TJ)
Power Dissipation (Max)310 W
Supplier Device PackageEPM7
RoHSRoHS
Part StatusObsolete

Application & Notes

FP7G75US60 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The EPM7 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

InputStandard
Power - Max310 W
ConfigurationHalf Bridge
NTC ThermistorNo
Vce(on) (Max) @ Vge, Ic2.8V @ 15V, 75A
Current - Collector (Ic) (Max)75 A
Input Capacitance (Cies) @ Vce4.515 nF @ 30 V
Current - Collector Cutoff (Max)250 µA
Voltage - Collector Emitter Breakdown (Max)600 V

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