Rochester Electronics, LLCEPM7RoHS
FP7G75US60
IGBT
Category
Subcategory
Transistors Igbts Modules
Package
EPM7
Series
Power-SPM™
Status
Obsolete
Datasheet
$29.63 / unit (market reference)
MOQ: 11 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FP7G75US60 |
| Package / Case | EPM7 |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 125°C (TJ) |
| Power Dissipation (Max) | 310 W |
| Supplier Device Package | EPM7 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
FP7G75US60 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The EPM7 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FP7G75US60
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All Technical Specifications
| Input | Standard |
| Power - Max | 310 W |
| Configuration | Half Bridge |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 2.8V @ 15V, 75A |
| Current - Collector (Ic) (Max) | 75 A |
| Input Capacitance (Cies) @ Vce | 4.515 nF @ 30 V |
| Current - Collector Cutoff (Max) | 250 µA |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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