VS-GP400TD60S
IGBT MOD 600V 758A INT-A-PAK
Transistors Igbts Modules
Dual INT-A-PAK (3 + 8)
Active
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-GP400TD60S |
| Package / Case | Dual INT-A-PAK (3 + 8) |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 1563 W |
| Supplier Device Package | Dual INT-A-PAK |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
VS-GP400TD60S by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Dual INT-A-PAK (3 + 8) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for VS-GP400TD60S
Alternatives & Replacements
View All →BSM75GB120DLCHOSA1
IGBT MOD 1200V 170A 690W
FP50R06W2E3B11BOMA1
IGBT MODULE 600V 65A 175W
FS15R06XL4BOMA1
IGBT MODULE 600V 20A 81W
FS10R06VL4B2BOMA1
FS10R06V - IGBT MODULE
FP7G100US60
IGBT, 100A, 600V, N-CHANNEL
FP7G75US60
IGBT
All Technical Specifications
| Input | Standard |
| IGBT Type | PT, Trench |
| Power - Max | 1563 W |
| Configuration | Half Bridge |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 1.52V @ 15V, 400A |
| Current - Collector (Ic) (Max) | 758 A |
| Current - Collector Cutoff (Max) | 200 µA |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.