Vishay General Semiconductor - Diodes DivisionDouble INT-A-PAK (5)RoHS
VS-GB600AH120N
IGBT MOD 1200V 910A INT-A-PAK
Category
Subcategory
Transistors Igbts Modules
Package
Double INT-A-PAK (5)
Status
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-GB600AH120N |
| Package / Case | Double INT-A-PAK (5) |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 3125 W |
| Supplier Device Package | Double INT-A-PAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VS-GB600AH120N by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Double INT-A-PAK (5) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input | Standard |
| Power - Max | 3125 W |
| Configuration | Single |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 1.9V @ 15V, 600A (Typ) |
| Current - Collector (Ic) (Max) | 910 A |
| Input Capacitance (Cies) @ Vce | 41 nF @ 25 V |
| Current - Collector Cutoff (Max) | 5 mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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