Vishay General Semiconductor - Diodes DivisionDouble INT-A-PAK (3 + 4)RoHS
VS-GB200TH120U
IGBT MOD 1200V 330A INT-A-PAK
Category
Subcategory
Transistors Igbts Modules
Package
Double INT-A-PAK (3 + 4)
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-GB200TH120U |
| Package / Case | Double INT-A-PAK (3 + 4) |
| Mounting Type | Chassis Mount |
| Operating Temperature | 150°C (TJ) |
| Power Dissipation (Max) | 1316 W |
| Supplier Device Package | Double INT-A-PAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VS-GB200TH120U by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Double INT-A-PAK (3 + 4) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input | Standard |
| Power - Max | 1316 W |
| Configuration | Half Bridge |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 3.6V @ 15V, 200A |
| Current - Collector (Ic) (Max) | 330 A |
| Input Capacitance (Cies) @ Vce | 16.9 nF @ 30 V |
| Current - Collector Cutoff (Max) | 5 mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
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