IGBT MOD 1200V 127A ECONO3 4PACK
Transistors Igbts Modules
Module
Obsolete
Price available on request
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-GB100YG120NT |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 625 W |
| Supplier Device Package | ECONO3 4PACK |
| RoHS | RoHS |
| Part Status | Obsolete |
VS-GB100YG120NT by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
IGBT MOD 1200V 170A 690W
IGBT MODULE 600V 65A 175W
IGBT MODULE 600V 20A 81W
IGBT MOD 1200V 320A 1100W
IGBT MOD 1200V 20A 145W
IGBT MOD 1200V 115A 460W
| Input | Standard |
| IGBT Type | NPT |
| Power - Max | 625 W |
| Configuration | Full Bridge |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 4V @ 15V, 100A |
| Current - Collector (Ic) (Max) | 127 A |
| Current - Collector Cutoff (Max) | 80 µA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Submit your quantity and details — we will reply within 24 hours.