Rochester Electronics, LLCModuleRoHS
FS225R12KE4BOSA1
IGBT MOD 1200V 320A 1100W
Category
Subcategory
Transistors Igbts Modules
Package
Module
Series
EconoPACK™+
Status
Not For New Designs
Datasheet
$369.73 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
✅ 365-Day Warranty🚚 Global Shipping
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | FS225R12KE4BOSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C |
| Power Dissipation (Max) | 1100 W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Not For New Designs |
Application & Notes
FS225R12KE4BOSA1 by Rochester Electronics, LLC is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for FS225R12KE4BOSA1
Alternatives & Replacements
View All →Rochester Electronics, LLCStockModule
BSM75GB120DLCHOSA1
IGBT MOD 1200V 170A 690W
Request QuoteRFQ →
Rochester Electronics, LLCStockModule
FP50R06W2E3B11BOMA1
IGBT MODULE 600V 65A 175W
Request QuoteRFQ →
Rochester Electronics, LLCStockModule
FS15R06XL4BOMA1
IGBT MODULE 600V 20A 81W
Request QuoteRFQ →
Rochester Electronics, LLCStockModule
F3L15R12W2H3B27BOMA1
IGBT MOD 1200V 20A 145W
Request QuoteRFQ →
Rochester Electronics, LLCStockModule
BSM50GB120DLCHOSA1
IGBT MOD 1200V 115A 460W
Request QuoteRFQ →
Rochester Electronics, LLCStockModule
DF150R12RT4HOSA1
IGBT MOD 1200V 150A 790W
Request QuoteRFQ →
All Technical Specifications
| Input | Standard |
| IGBT Type | Trench Field Stop |
| Power - Max | 1100 W |
| Configuration | Full Bridge |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 2.15V @ 15V, 225A |
| Current - Collector (Ic) (Max) | 320 A |
| Input Capacitance (Cies) @ Vce | 13 nF @ 25 V |
| Current - Collector Cutoff (Max) | 3 mA |
| Voltage - Collector Emitter Breakdown (Max) | 1200 V |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.