Vishay General Semiconductor - Diodes DivisionSOT-227-4, miniBLOCRoHS
VS-FC220SA20
MOSFET N-CH 200V 220A SOT-227
Category
Subcategory
Transistors Fets Mosfets Single
Package
SOT-227-4, miniBLOC
Status
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-FC220SA20 |
| Package / Case | SOT-227-4, miniBLOC |
| Mounting Type | Chassis Mount |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 200 V |
| Rds On (Max) | 7mOhm @ 150A, 10V |
| Vgs(th) (Max) | 5.1V @ 500µA |
| Gate Charge (Qg) | 350 nC @ 10 V |
| Input Capacitance (Ciss) | 21000 pF @ 50 V |
| Power Dissipation (Max) | 789W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | SOT-227 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VS-FC220SA20 by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-227-4, miniBLOC package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7mOhm @ 150A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 5.1V @ 500µA |
| Rds On (Max) @ Id, Vgs | 7mOhm @ 150A, 10V |
| Power Dissipation (Max) | 789W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 350 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 200 V |
| Input Capacitance (Ciss) (Max) @ Vds | 21000 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 220A (Tc) |
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