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IXYSSOT-227-4, miniBLOCRoHS

IXFN82N60Q3

MOSFET N-CH 600V 66A SOT227B

IXFN82N60Q3 by IXYS
Subcategory

Transistors Fets Mosfets Single

Package

SOT-227-4, miniBLOC

Series

HiPerFET™, Q3 Class

Status

Active

Datasheet

https://www.littelfuse.com/~/media/electronics/datasheets/discrete_mosfets/littelfuse_discrete_mosfets_n-channel_hiperfets_ixfn82n60q3_datasheet.pdf.pdf

$58.12 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandIXYS
ModelIXFN82N60Q3
Package / CaseSOT-227-4, miniBLOC
Mounting TypeChassis Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)75mOhm @ 41A, 10V
Vgs(th) (Max)6.5V @ 8mA
Gate Charge (Qg)275 nC @ 10 V
Input Capacitance (Ciss)13500 pF @ 25 V
Power Dissipation (Max)960W (Tc)
Drive Voltage10V
Supplier Device PackageSOT-227B
RoHSRoHS
Part StatusActive

Application & Notes

IXFN82N60Q3 by IXYS is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-227-4, miniBLOC package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 75mOhm @ 41A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id6.5V @ 8mA
Rds On (Max) @ Id, Vgs75mOhm @ 41A, 10V
Power Dissipation (Max)960W (Tc)
Gate Charge (Qg) (Max) @ Vgs275 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds13500 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C66A (Tc)

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