Vishay General Semiconductor - Diodes DivisionModuleRoHS
VS-ETF150Y65N
IGBT MOD 650V 201A 600W
Category
Subcategory
Transistors Igbts Modules
Package
Module
Series
FRED Pt®
Status
Obsolete
$68.56 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-ETF150Y65N |
| Package / Case | Module |
| Operating Temperature | 175°C (TJ) |
| Power Dissipation (Max) | 600 W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VS-ETF150Y65N by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input | Standard |
| IGBT Type | NPT |
| Power - Max | 600 W |
| Configuration | Half Bridge Inverter |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 2.17V @ 15V, 150A |
| Current - Collector (Ic) (Max) | 201 A |
| Voltage - Collector Emitter Breakdown (Max) | 650 V |
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