Vishay General Semiconductor - Diodes DivisionEMIPAK-2BRoHS
VS-ETF075Y60U
IGBT MOD 600V 109A EMIPAK-2B
Category
Subcategory
Transistors Igbts Modules
Package
EMIPAK-2B
Status
Active
$102.18 / unit (market reference)
MOQ: 60 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-ETF075Y60U |
| Package / Case | EMIPAK-2B |
| Mounting Type | Chassis Mount |
| Operating Temperature | 175°C (TJ) |
| Power Dissipation (Max) | 294 W |
| Supplier Device Package | EMIPAK-2B |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
VS-ETF075Y60U by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The EMIPAK-2B package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| Input | Standard |
| IGBT Type | Trench |
| Power - Max | 294 W |
| Configuration | Three Level Inverter |
| NTC Thermistor | Yes |
| Vce(on) (Max) @ Vge, Ic | 1.93V @ 15V, 75A |
| Current - Collector (Ic) (Max) | 109 A |
| Input Capacitance (Cies) @ Vce | 4.44 nF @ 30 V |
| Current - Collector Cutoff (Max) | 100 µA |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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