Vishay General Semiconductor - Diodes Division19-SIP (13 Leads), IMS-2RoHS
VS-CPV364M4KPBF
IGBT MODULE 600V 24A 63W IMS-2
Category
Subcategory
Transistors Igbts Modules
Package
19-SIP (13 Leads), IMS-2
Status
Obsolete
Datasheet
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Vishay General Semiconductor - Diodes Division |
| Model | VS-CPV364M4KPBF |
| Package / Case | 19-SIP (13 Leads), IMS-2 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| Power Dissipation (Max) | 63 W |
| Supplier Device Package | IMS-2 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
VS-CPV364M4KPBF by Vishay General Semiconductor - Diodes Division is an N-channel power MOSFET rated at N/A / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 19-SIP (13 Leads), IMS-2 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max N/A. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for VS-CPV364M4KPBF
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All Technical Specifications
| Input | Standard |
| Power - Max | 63 W |
| Configuration | Three Phase Inverter |
| NTC Thermistor | No |
| Vce(on) (Max) @ Vge, Ic | 1.8V @ 15V, 24A |
| Current - Collector (Ic) (Max) | 24 A |
| Input Capacitance (Cies) @ Vce | 1.6 nF @ 30 V |
| Current - Collector Cutoff (Max) | 250 µA |
| Voltage - Collector Emitter Breakdown (Max) | 600 V |
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