USB10H
SMALL SIGNAL P-CHANNEL MOSFET
Transistors Fets Mosfets Arrays
SOT-23-6 Thin, TSOT-23-6
PowerTrench®
Obsolete
$0.18 / unit (market reference)
MOQ: 1697 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | USB10H |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Rds On (Max) | 170mOhm @ 1.9A, 4.5V |
| Vgs(th) (Max) | 1.5V @ 250µA |
| Gate Charge (Qg) | 4.2nC @ 4.5V |
| Input Capacitance (Ciss) | 441pF @ 10V |
| Power Dissipation (Max) | 700mW |
| Supplier Device Package | SuperSOT™-6 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
USB10H by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 170mOhm @ 1.9A, 4.5V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for USB10H
Alternatives & Replacements
View All →CPH6635-TL-H
MOSFET N/P-CH 30V/20V CPH6
FDC6322C
SMALL SIGNAL P-CHANNEL MOSFET
FDC6320C
SMALL SIGNAL FIELD-EFFECT TRANSI
FDC6302P
SMALL SIGNAL FIELD-EFFECT TRANSI
FDC6432SH
SMALL SIGNAL P-CHANNEL MOSFET
FDC6308P
P-CHANNEL MOSFET
All Technical Specifications
| FET Type | 2 P-Channel (Dual) |
| FET Feature | Logic Level Gate |
| Power - Max | 700mW |
| Vgs(th) (Max) @ Id | 1.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 170mOhm @ 1.9A, 4.5V |
| Gate Charge (Qg) (Max) @ Vgs | 4.2nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 441pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 1.9A |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.