MOSFET N/P-CH 30V/20V CPH6

Transistors Fets Mosfets Arrays
SOT-23-6 Thin, TSOT-23-6
Obsolete
$0.16 / unit (market reference)
MOQ: 1924 pcs
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| Parameter | Value |
|---|---|
| Brand | onsemi |
| Model | CPH6635-TL-H |
| Package / Case | SOT-23-6 Thin, TSOT-23-6 |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N and P-Channel |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Rds On (Max) | 3.7Ohm @ 80mA, 4V |
| Gate Charge (Qg) | 1.58nC @ 10V |
| Input Capacitance (Ciss) | 7pF @ 10V |
| Power Dissipation (Max) | 800mW |
| Supplier Device Package | 6-CPH |
| RoHS | RoHS |
| Part Status | Obsolete |
CPH6635-TL-H by onsemi is an N-channel power MOSFET rated at 30V, 20V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The SOT-23-6 Thin, TSOT-23-6 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.7Ohm @ 80mA, 4V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
SMALL SIGNAL P-CHANNEL MOSFET
SMALL SIGNAL FIELD-EFFECT TRANSI
SMALL SIGNAL FIELD-EFFECT TRANSI
SMALL SIGNAL P-CHANNEL MOSFET
P-CHANNEL MOSFET
MOSFET 2P-CH 20V 1.6A 6TSOP
| FET Type | N and P-Channel |
| FET Feature | Logic Level Gate |
| Power - Max | 800mW |
| Rds On (Max) @ Id, Vgs | 3.7Ohm @ 80mA, 4V |
| Gate Charge (Qg) (Max) @ Vgs | 1.58nC @ 10V |
| Drain to Source Voltage (Vdss) | 30V, 20V |
| Input Capacitance (Ciss) (Max) @ Vds | 7pF @ 10V |
| Current - Continuous Drain (Id) @ 25°C | 400mA, 1.5A |
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