UPA2463T1Q-E1-AX
MOSFET N-CH 20V 6A 8HUSON
Transistors Fets Mosfets Single
8-WFDFN Exposed Pad
Obsolete
Price available on request
MOQ: 800 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | UPA2463T1Q-E1-AX |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 20 V |
| Rds On (Max) | 20mOhm @ 3A, 10V |
| Gate Charge (Qg) | 7 nC @ 4 V |
| Input Capacitance (Ciss) | 680 pF @ 10 V |
| Power Dissipation (Max) | 1W (Ta) |
| Supplier Device Package | 8-HUSON (2.7x2) |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
UPA2463T1Q-E1-AX by Rochester Electronics, LLC is an N-channel power MOSFET rated at 20 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-WFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for UPA2463T1Q-E1-AX
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 3A, 10V |
| Power Dissipation (Max) | 1W (Ta) |
| Gate Charge (Qg) (Max) @ Vgs | 7 nC @ 4 V |
| Drain to Source Voltage (Vdss) | 20 V |
| Input Capacitance (Ciss) (Max) @ Vds | 680 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 6A (Ta) |
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