Rochester Electronics, LLC8-WFDFN Exposed PadRoHS
RJK03N6DPA-00#J5A
MOSFET N-CH 30V 40A 8WPAK
Category
Subcategory
Transistors Fets Mosfets Single
Package
8-WFDFN Exposed Pad
Status
Obsolete
Datasheet
$0.70 / unit (market reference)
MOQ: 429 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | RJK03N6DPA-00#J5A |
| Package / Case | 8-WFDFN Exposed Pad |
| Mounting Type | Surface Mount |
| Operating Temperature | 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 30 V |
| Rds On (Max) | 3.8mOhm @ 20A, 10V |
| Gate Charge (Qg) | 19 nC @ 4.5 V |
| Input Capacitance (Ciss) | 3220 pF @ 10 V |
| Power Dissipation (Max) | 35W (Tc) |
| Supplier Device Package | 8-WPAK |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
RJK03N6DPA-00#J5A by Rochester Electronics, LLC is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-WFDFN Exposed Pad package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 3.8mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for RJK03N6DPA-00#J5A
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All Technical Specifications
| FET Type | N-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 3.8mOhm @ 20A, 10V |
| Power Dissipation (Max) | 35W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 19 nC @ 4.5 V |
| Drain to Source Voltage (Vdss) | 30 V |
| Input Capacitance (Ciss) (Max) @ Vds | 3220 pF @ 10 V |
| Current - Continuous Drain (Id) @ 25°C | 40A (Ta) |
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