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UnitedSiCTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

UF3C065030B3

MOSFET N-CH 650V 65A TO263

Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Status

Active

$19.94 / unit (market reference)

MOQ: 1 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

Parameters

ParameterValue
BrandUnitedSiC
ModelUF3C065030B3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)35mOhm @ 40A, 12V
Vgs(th) (Max)6V @ 10mA
Gate Charge (Qg)51 nC @ 15 V
Input Capacitance (Ciss)1500 pF @ 100 V
Power Dissipation (Max)242W (Tc)
Drive Voltage12V
Supplier Device PackageTO-263 (D2Pak)
RoHSRoHS
Part StatusActive

Application & Notes

UF3C065030B3 by UnitedSiC is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 35mOhm @ 40A, 12V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±25V
Vgs(th) (Max) @ Id6V @ 10mA
Rds On (Max) @ Id, Vgs35mOhm @ 40A, 12V
Power Dissipation (Max)242W (Tc)
Gate Charge (Qg) (Max) @ Vgs51 nC @ 15 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds1500 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)12V
Current - Continuous Drain (Id) @ 25°C65A (Tc)

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