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Infineon TechnologiesTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

IPB65R225C7ATMA1

MOSFET N-CH 650V 11A D2PAK

IPB65R225C7ATMA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

CoolMOS™ C7

Status

Discontinued at Digi-Key

Datasheet

View Datasheet ↗

$1.13 / unit (market reference)

MOQ: 265 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelIPB65R225C7ATMA1
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)650 V
Rds On (Max)225mOhm @ 4.8A, 10V
Vgs(th) (Max)4V @ 240µA
Gate Charge (Qg)20 nC @ 10 V
Input Capacitance (Ciss)996 pF @ 400 V
Power Dissipation (Max)63W (Tc)
Drive Voltage10V
Supplier Device PackagePG-TO263-3
RoHSRoHS
Part StatusDiscontinued at Digi-Key

Application & Notes

IPB65R225C7ATMA1 by Infineon Technologies is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 225mOhm @ 4.8A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for IPB65R225C7ATMA1

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MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

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Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB6035AL

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

AUIRF3710ZSTRR

MOSFET N-CH 100V 59A D2PAK

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Infineon TechnologiesStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

SPB80N03S2L-05

MOSFET N-CH 30V 80A TO263-3

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Rochester Electronics, LLCStockTO-263-3, D²Pak (2 Leads + Tab), TO-263AB

FDB7045L

N-CHANNEL POWER MOSFET

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All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 240µA
Rds On (Max) @ Id, Vgs225mOhm @ 4.8A, 10V
Power Dissipation (Max)63W (Tc)
Gate Charge (Qg) (Max) @ Vgs20 nC @ 10 V
Drain to Source Voltage (Vdss)650 V
Input Capacitance (Ciss) (Max) @ Vds996 pF @ 400 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C11A (Tc)

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