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Taiwan Semiconductor CorporationTO-220-3 Full PackRoHS

TSM60NB150CF C0G

MOSFET N-CH 600V 24A ITO220S

TSM60NB150CF C0G by Taiwan Semiconductor Corporation
Subcategory

Transistors Fets Mosfets Single

Package

TO-220-3 Full Pack

Status

Active

$2.98 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandTaiwan Semiconductor Corporation
ModelTSM60NB150CF C0G
Package / CaseTO-220-3 Full Pack
Mounting TypeThrough Hole
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)600 V
Rds On (Max)150mOhm @ 4.3A, 10V
Vgs(th) (Max)4V @ 250µA
Gate Charge (Qg)43 nC @ 10 V
Input Capacitance (Ciss)1765 pF @ 100 V
Power Dissipation (Max)62.5W (Tc)
Drive Voltage10V
Supplier Device PackageITO-220S
RoHSRoHS
Part StatusActive

Application & Notes

TSM60NB150CF C0G by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 600 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 150mOhm @ 4.3A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4V @ 250µA
Rds On (Max) @ Id, Vgs150mOhm @ 4.3A, 10V
Power Dissipation (Max)62.5W (Tc)
Gate Charge (Qg) (Max) @ Vgs43 nC @ 10 V
Drain to Source Voltage (Vdss)600 V
Input Capacitance (Ciss) (Max) @ Vds1765 pF @ 100 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C24A (Tc)

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