Rochester Electronics, LLCTO-220-3 Full PackRoHS
2SJ650
MOSFET P-CH 60V 12A TO220ML
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-220-3 Full Pack
Status
Obsolete
Datasheet
$0.37 / unit (market reference)
MOQ: 802 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | 2SJ650 |
| Package / Case | TO-220-3 Full Pack |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 60 V |
| Rds On (Max) | 135mOhm @ 6A, 10V |
| Gate Charge (Qg) | 21 nC @ 10 V |
| Input Capacitance (Ciss) | 1020 pF @ 20 V |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) |
| Supplier Device Package | TO-220ML |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
2SJ650 by Rochester Electronics, LLC is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 Full Pack package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 135mOhm @ 6A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for 2SJ650
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All Technical Specifications
| FET Type | P-Channel |
| Technology | MOSFET (Metal Oxide) |
| Rds On (Max) @ Id, Vgs | 135mOhm @ 6A, 10V |
| Power Dissipation (Max) | 2W (Ta), 20W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 21 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 60 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1020 pF @ 20 V |
| Current - Continuous Drain (Id) @ 25°C | 12A (Ta) |
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