What is the minimum order quantity for TSM2N7000KCT B0G?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

How long does shipping take for TSM2N7000KCT B0G?

Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

Are your electronic components genuine and authentic?

Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for TSM2N7000KCT B0G?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for TSM2N7000KCT B0G?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Taiwan Semiconductor CorporationTO-226-3, TO-92-3 (TO-226AA)RoHS

TSM2N7000KCT B0G

Name: TSM2N7000KCT B0G
Brand: Taiwan Semiconductor Corporation
SKU: TSM2N7000KCT B0G
Availability: PreOrder

MOSFET N-CHANNEL 60V 300MA TO92

TSM2N7000KCT B0G by Taiwan Semiconductor Corporation

Parameters

Parameter	Value
Brand	Taiwan Semiconductor Corporation
Model	TSM2N7000KCT B0G
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Rds On (Max)	5Ohm @ 100mA, 10V
Vgs(th) (Max)	2.5V @ 250µA
Gate Charge (Qg)	0.4 nC @ 4.5 V
Input Capacitance (Ciss)	7.32 pF @ 25 V
Power Dissipation (Max)	400mW (Ta)
Drive Voltage	5V, 10V
Supplier Device Package	TO-92
RoHS	RoHS
Part Status	Obsolete

Application & Notes

TSM2N7000KCT B0G by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 5Ohm @ 100mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for TSM2N7000KCT B0G

📄

MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

📄

Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →

Rochester Electronics, LLCStockTO-226-3, TO-92-3 (TO-226AA)

SSN1N45BBU

MOSFET N-CH 450V 500MA TO92-3

Request QuoteRFQ →

Diodes IncorporatedStockTO-226-3, TO-92-3 (TO-226AA)

ZVP3306A

MOSFET P-CH 60V 160MA TO92-3

Request QuoteRFQ →

Rochester Electronics, LLCStockTO-226-3, TO-92-3 (TO-226AA)

PN3685

MOSFET N-CH TO-92

Request QuoteRFQ →

onsemiStockTO-226-3, TO-92-3 (TO-226AA)

BS270

MOSFET N-CH 60V 400MA TO92-3

Request QuoteRFQ →

Rochester Electronics, LLCStockTO-226-3, TO-92-3 (TO-226AA)

BS270

SMALL SIGNAL FIELD-EFFECT TRANSI

Request QuoteRFQ →

Microchip TechnologyStockTO-226-3, TO-92-3 (TO-226AA)

VN2106N3-G

MOSFET N-CH 60V 300MA TO92-3

Request QuoteRFQ →

All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.5V @ 250µA
Rds On (Max) @ Id, Vgs	5Ohm @ 100mA, 10V
Power Dissipation (Max)	400mW (Ta)
Gate Charge (Qg) (Max) @ Vgs	0.4 nC @ 4.5 V
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	7.32 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	300mA (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.