What is the minimum order quantity for VN2106N3-G?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

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Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

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Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for VN2106N3-G?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for VN2106N3-G?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Microchip TechnologyTO-226-3, TO-92-3 (TO-226AA)RoHS

VN2106N3-G

Name: VN2106N3-G
Brand: Microchip Technology
SKU: VN2106N3-G
Price: 0.47 USD
Availability: InStock

MOSFET N-CH 60V 300MA TO92-3

Parameters

Parameter	Value
Brand	Microchip Technology
Model	VN2106N3-G
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	60 V
Rds On (Max)	4Ohm @ 500mA, 10V
Vgs(th) (Max)	2.4V @ 1mA
Input Capacitance (Ciss)	50 pF @ 25 V
Power Dissipation (Max)	1W (Tc)
Drive Voltage	5V, 10V
Supplier Device Package	TO-92-3
RoHS	RoHS
Part Status	Active

Application & Notes

VN2106N3-G by Microchip Technology is an N-channel power MOSFET rated at 60 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4Ohm @ 500mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4V @ 1mA
Rds On (Max) @ Id, Vgs	4Ohm @ 500mA, 10V
Power Dissipation (Max)	1W (Tc)
Drain to Source Voltage (Vdss)	60 V
Input Capacitance (Ciss) (Max) @ Vds	50 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	300mA (Tj)

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