TSM22P10CZ C0G
MOSFET P-CH 100V 22A TO220
Transistors Fets Mosfets Single
TO-220-3
Obsolete
Price available on request
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM22P10CZ C0G |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | 150°C (TJ) |
| FET Type | P-Channel |
| Drain to Source Voltage (Vdss) | 100 V |
| Rds On (Max) | 140mOhm @ 20A, 10V |
| Vgs(th) (Max) | 3V @ 250µA |
| Gate Charge (Qg) | 42 nC @ 10 V |
| Input Capacitance (Ciss) | 2250 pF @ 30 V |
| Power Dissipation (Max) | 125W (Tc) |
| Drive Voltage | 4.5V, 10V |
| Supplier Device Package | TO-220 |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TSM22P10CZ C0G by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 140mOhm @ 20A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM22P10CZ C0G
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All Technical Specifications
| FET Type | P-Channel |
| Vgs (Max) | ±25V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 3V @ 250µA |
| Rds On (Max) @ Id, Vgs | 140mOhm @ 20A, 10V |
| Power Dissipation (Max) | 125W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 42 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 100 V |
| Input Capacitance (Ciss) (Max) @ Vds | 2250 pF @ 30 V |
| Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25°C | 22A (Tc) |
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