Rochester Electronics, LLCTO-220-3RoHS
IRF730B
N-CHANNEL POWER MOSFET
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-220-3
Status
Active
$0.29 / unit (market reference)
MOQ: 1031 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRF730B |
| Package / Case | TO-220-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 400 V |
| Rds On (Max) | 1Ohm @ 2.75A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 33 nC @ 10 V |
| Input Capacitance (Ciss) | 1000 pF @ 25 V |
| Power Dissipation (Max) | 73W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-220 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRF730B by Rochester Electronics, LLC is an N-channel power MOSFET rated at 400 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-220-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 1Ohm @ 2.75A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
You may also need
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±30V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 1Ohm @ 2.75A, 10V |
| Power Dissipation (Max) | 73W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 33 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 400 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1000 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 5.5A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.