TSM200N03DPQ33 RGG
MOSFET 2 N-CH 30V 20A 8PDFN
Transistors Fets Mosfets Arrays
8-PowerWDFN
Active
$0.73 / unit (market reference)
MOQ: 15000 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Taiwan Semiconductor Corporation |
| Model | TSM200N03DPQ33 RGG |
| Package / Case | 8-PowerWDFN |
| Mounting Type | Surface Mount |
| Operating Temperature | -55°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 30V |
| Rds On (Max) | 20mOhm @ 10A, 10V |
| Vgs(th) (Max) | 2.5V @ 250µA |
| Gate Charge (Qg) | 4nC @ 4.5V |
| Input Capacitance (Ciss) | 345pF @ 25V |
| Power Dissipation (Max) | 20W |
| Supplier Device Package | 8-PDFN (3x3) |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TSM200N03DPQ33 RGG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 30V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 20mOhm @ 10A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for TSM200N03DPQ33 RGG
Alternatives & Replacements
View All →FDMS7620S
SMALL SIGNAL FIELD-EFFECT TRANSI
FDPC1002S
POWER FIELD-EFFECT TRANSISTOR, 1
SIZ918DT-T1-GE3
MOSFET 2N-CH 30V 16A POWERPAIR
FDPC8012S
MOSFET 2N-CH 25V 13A/26A PWR CLP
FDPC1012S
POWER FIELD-EFFECT TRANSISTOR
SIZ270DT-T1-GE3
DUAL N-CHANNEL 100-V (D-S) MOSFE
All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Standard |
| Power - Max | 20W |
| Vgs(th) (Max) @ Id | 2.5V @ 250µA |
| Rds On (Max) @ Id, Vgs | 20mOhm @ 10A, 10V |
| Gate Charge (Qg) (Max) @ Vgs | 4nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 30V |
| Input Capacitance (Ciss) (Max) @ Vds | 345pF @ 25V |
| Current - Continuous Drain (Id) @ 25°C | 20A (Tc) |
Request a Quote
Submit your quantity and details — we will reply within 24 hours.