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Rochester Electronics, LLC8-PowerWDFNRoHS

FDPC1002S

POWER FIELD-EFFECT TRANSISTOR, 1

FDPC1002S by Rochester Electronics, LLC
Subcategory

Transistors Fets Mosfets Arrays

Package

8-PowerWDFN

Series

PowerTrench®

Status

Obsolete

Price available on request

MOQ: 825 pcs

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Parameters

ParameterValue
BrandRochester Electronics, LLC
ModelFDPC1002S
Package / Case8-PowerWDFN
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)25V
Rds On (Max)6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
Vgs(th) (Max)2.2V @ 250µA, 2.2V @ 1mA
Gate Charge (Qg)19nC @ 10V, 64nC @ 10V
Input Capacitance (Ciss)1240pF @13V, 4335pF @ 13V
Power Dissipation (Max)1.6W (Ta), 2W (Ta)
Supplier Device PackagePowerclip-33
RoHSRoHS
Part StatusObsolete

Application & Notes

FDPC1002S by Rochester Electronics, LLC is an N-channel power MOSFET rated at 25V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The 8-PowerWDFN package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureStandard
Power - Max1.6W (Ta), 2W (Ta)
Vgs(th) (Max) @ Id2.2V @ 250µA, 2.2V @ 1mA
Rds On (Max) @ Id, Vgs6mOhm @ 13A, 10V, 1.8mOhm @ 27A, 10V
Gate Charge (Qg) (Max) @ Vgs19nC @ 10V, 64nC @ 10V
Drain to Source Voltage (Vdss)25V
Input Capacitance (Ciss) (Max) @ Vds1240pF @13V, 4335pF @ 13V
Current - Continuous Drain (Id) @ 25°C13A (Ta), 20A (Tc), 27A (Ta), 60A (Tc)

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