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Taiwan Semiconductor CorporationTO-261-4, TO-261AARoHS

TSM1N80CW RPG

MOSFET N-CH 800V 300MA SOT223

TSM1N80CW RPG by Taiwan Semiconductor Corporation
Subcategory

Transistors Fets Mosfets Single

Package

TO-261-4, TO-261AA

Status

Obsolete

$1.33 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandTaiwan Semiconductor Corporation
ModelTSM1N80CW RPG
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)800 V
Rds On (Max)21.6Ohm @ 150mA, 10V
Vgs(th) (Max)5V @ 250µA
Gate Charge (Qg)6 nC @ 10 V
Input Capacitance (Ciss)200 pF @ 25 V
Power Dissipation (Max)2.1W (Tc)
Drive Voltage10V
Supplier Device PackageSOT-223
RoHSRoHS
Part StatusObsolete

Application & Notes

TSM1N80CW RPG by Taiwan Semiconductor Corporation is an N-channel power MOSFET rated at 800 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 21.6Ohm @ 150mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±30V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id5V @ 250µA
Rds On (Max) @ Id, Vgs21.6Ohm @ 150mA, 10V
Power Dissipation (Max)2.1W (Tc)
Gate Charge (Qg) (Max) @ Vgs6 nC @ 10 V
Drain to Source Voltage (Vdss)800 V
Input Capacitance (Ciss) (Max) @ Vds200 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C300mA (Ta)

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