PC
CategoriesBrandsBOMBlogAbout
NXP USA Inc.TO-261-4, TO-261AARoHS

PMT760EN,115

MOSFET N-CH 100V 900MA SOT223

PMT760EN,115 by NXP USA Inc.
Subcategory

Transistors Fets Mosfets Single

Package

TO-261-4, TO-261AA

Status

Obsolete

$0.05 / unit (market reference)

MOQ: 5770 pcs

Submit your quantity via the inquiry form for a competitive quote within 24 hours.

✅ 365-Day Warranty🚚 Global Shipping

Parameters

ParameterValue
BrandNXP USA Inc.
ModelPMT760EN,115
Package / CaseTO-261-4, TO-261AA
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 150°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)100 V
Rds On (Max)950mOhm @ 800mA, 10V
Vgs(th) (Max)2.5V @ 250µA
Gate Charge (Qg)3 nC @ 10 V
Input Capacitance (Ciss)160 pF @ 80 V
Power Dissipation (Max)800mW (Ta), 6.2W (Tc)
Drive Voltage4.5V, 10V
Supplier Device PackageSC-73
RoHSRoHS
Part StatusObsolete

Application & Notes

PMT760EN,115 by NXP USA Inc. is an N-channel power MOSFET rated at 100 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-261-4, TO-261AA package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 950mOhm @ 800mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

📖 Technical Guides for PMT760EN,115

📄

MOSFET Alternatives: IRFZ44N, AO3400, IRF4905 & More — Cross Reference Guide

Components Guide

📄

Power Discrete Alternatives Guide: MOSFET, IGBT, SiC, GaN Cross-Reference

Components Guide

Alternatives & Replacements

View All →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP318SL6327HTSA1

MOSFET N-CH 60V 2.6A SOT223-4

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP135L6327HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Request QuoteRFQ →
NXP USA Inc.StockTO-261-4, TO-261AA

PHT6N06LT,135

MOSFET N-CH 55V 2.5A SOT223

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP125L6327HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP135L6906HTSA1

MOSFET N-CH 600V 120MA SOT223-4

Request QuoteRFQ →
Infineon TechnologiesStockTO-261-4, TO-261AA

BSP88E6327

MOSFET N-CH 240V 350MA SOT223-4

Request QuoteRFQ →

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id2.5V @ 250µA
Rds On (Max) @ Id, Vgs950mOhm @ 800mA, 10V
Power Dissipation (Max)800mW (Ta), 6.2W (Tc)
Gate Charge (Qg) (Max) @ Vgs3 nC @ 10 V
Drain to Source Voltage (Vdss)100 V
Input Capacitance (Ciss) (Max) @ Vds160 pF @ 80 V
Drive Voltage (Max Rds On, Min Rds On)4.5V, 10V
Current - Continuous Drain (Id) @ 25°C900mA (Ta)

Request a Quote

Submit your quantity and details — we will reply within 24 hours.