TransphormModuleRoHS
TPD3215M
GANFET 2N-CH 600V 70A MODULE
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Module
Status
Obsolete
$175.13 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Transphorm |
| Model | TPD3215M |
| Package / Case | Module |
| Mounting Type | Through Hole |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Half Bridge) |
| Drain to Source Voltage (Vdss) | 600V |
| Rds On (Max) | 34mOhm @ 30A, 8V |
| Gate Charge (Qg) | 28nC @ 8V |
| Input Capacitance (Ciss) | 2260pF @ 100V |
| Power Dissipation (Max) | 470W |
| Supplier Device Package | Module |
| RoHS | RoHS |
| Part Status | Obsolete |
Application & Notes
TPD3215M by Transphorm is an N-channel power MOSFET rated at 600V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 34mOhm @ 30A, 8V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | 2 N-Channel (Half Bridge) |
| FET Feature | GaNFET (Gallium Nitride) |
| Power - Max | 470W |
| Rds On (Max) @ Id, Vgs | 34mOhm @ 30A, 8V |
| Gate Charge (Qg) (Max) @ Vgs | 28nC @ 8V |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance (Ciss) (Max) @ Vds | 2260pF @ 100V |
| Current - Continuous Drain (Id) @ 25°C | 70A (Tc) |
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