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Infineon TechnologiesModuleRoHS

DF23MR12W1M1B11BPSA1

MOSFET MOD 1200V 25A

DF23MR12W1M1B11BPSA1 by Infineon Technologies
Subcategory

Transistors Fets Mosfets Arrays

Package

Module

Series

CoolSiC™+

Status

Active

$94.68 / unit (market reference)

MOQ: 1 pcs

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Parameters

ParameterValue
BrandInfineon Technologies
ModelDF23MR12W1M1B11BPSA1
Package / CaseModule
Mounting TypeChassis Mount
Operating Temperature-40°C ~ 150°C (TJ)
FET Type2 N-Channel (Dual)
Drain to Source Voltage (Vdss)1200V (1.2kV)
Rds On (Max)45mOhm @ 25A, 15V (Typ)
Vgs(th) (Max)5.55V @ 10mA
Gate Charge (Qg)62nC @ 15V
Input Capacitance (Ciss)1840pF @ 800V
Power Dissipation (Max)20mW
Supplier Device PackageAG-EASY1BM-2
RoHSRoHS
Part StatusActive

Application & Notes

DF23MR12W1M1B11BPSA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 25A, 15V (Typ). Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET Type2 N-Channel (Dual)
FET FeatureSilicon Carbide (SiC)
Power - Max20mW
Vgs(th) (Max) @ Id5.55V @ 10mA
Rds On (Max) @ Id, Vgs45mOhm @ 25A, 15V (Typ)
Gate Charge (Qg) (Max) @ Vgs62nC @ 15V
Drain to Source Voltage (Vdss)1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds1840pF @ 800V
Current - Continuous Drain (Id) @ 25°C25A (Tj)

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