Infineon TechnologiesModuleRoHS
DF23MR12W1M1B11BPSA1
MOSFET MOD 1200V 25A
Category
Subcategory
Transistors Fets Mosfets Arrays
Package
Module
Series
CoolSiC™+
Status
Active
Datasheet
$94.68 / unit (market reference)
MOQ: 1 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Infineon Technologies |
| Model | DF23MR12W1M1B11BPSA1 |
| Package / Case | Module |
| Mounting Type | Chassis Mount |
| Operating Temperature | -40°C ~ 150°C (TJ) |
| FET Type | 2 N-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Rds On (Max) | 45mOhm @ 25A, 15V (Typ) |
| Vgs(th) (Max) | 5.55V @ 10mA |
| Gate Charge (Qg) | 62nC @ 15V |
| Input Capacitance (Ciss) | 1840pF @ 800V |
| Power Dissipation (Max) | 20mW |
| Supplier Device Package | AG-EASY1BM-2 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
DF23MR12W1M1B11BPSA1 by Infineon Technologies is an N-channel power MOSFET rated at 1200V (1.2kV) / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The Module package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 45mOhm @ 25A, 15V (Typ). Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for DF23MR12W1M1B11BPSA1
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All Technical Specifications
| FET Type | 2 N-Channel (Dual) |
| FET Feature | Silicon Carbide (SiC) |
| Power - Max | 20mW |
| Vgs(th) (Max) @ Id | 5.55V @ 10mA |
| Rds On (Max) @ Id, Vgs | 45mOhm @ 25A, 15V (Typ) |
| Gate Charge (Qg) (Max) @ Vgs | 62nC @ 15V |
| Drain to Source Voltage (Vdss) | 1200V (1.2kV) |
| Input Capacitance (Ciss) (Max) @ Vds | 1840pF @ 800V |
| Current - Continuous Drain (Id) @ 25°C | 25A (Tj) |
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