TransphormTO-247-3RoHS
TP65H035WSQA
GANFET N-CH 650V 47.2A TO247-3
Category
Subcategory
Transistors Fets Mosfets Single
Package
TO-247-3
Series
Automotive, AEC-Q101
Status
Active
$22.85 / unit (market reference)
MOQ: 1 pcs
Submit your quantity via the inquiry form for a competitive quote within 24 hours.
Parameters
| Parameter | Value |
|---|---|
| Brand | Transphorm |
| Model | TP65H035WSQA |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 650 V |
| Rds On (Max) | 41mOhm @ 32A, 10V |
| Vgs(th) (Max) | 4.5V @ 1mA |
| Gate Charge (Qg) | 24 nC @ 10 V |
| Input Capacitance (Ciss) | 1500 pF @ 400 V |
| Power Dissipation (Max) | 187W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247-3 |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
TP65H035WSQA by Transphorm is an N-channel power MOSFET rated at 650 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 41mOhm @ 32A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
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All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | GaNFET (Cascode Gallium Nitride FET) |
| Vgs(th) (Max) @ Id | 4.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 41mOhm @ 32A, 10V |
| Power Dissipation (Max) | 187W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 24 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1500 pF @ 400 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 47.2A (Tc) |
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