IRFP048NPBF
HEXFET POWER MOSFET
Transistors Fets Mosfets Single
TO-247-3
HEXFET®
Active
$0.65 / unit (market reference)
MOQ: 460 pcs
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Parameters
| Parameter | Value |
|---|---|
| Brand | Rochester Electronics, LLC |
| Model | IRFP048NPBF |
| Package / Case | TO-247-3 |
| Mounting Type | Through Hole |
| Operating Temperature | -55°C ~ 175°C (TJ) |
| FET Type | N-Channel |
| Drain to Source Voltage (Vdss) | 55 V |
| Rds On (Max) | 16mOhm @ 37A, 10V |
| Vgs(th) (Max) | 4V @ 250µA |
| Gate Charge (Qg) | 89 nC @ 10 V |
| Input Capacitance (Ciss) | 1900 pF @ 25 V |
| Power Dissipation (Max) | 140W (Tc) |
| Drive Voltage | 10V |
| Supplier Device Package | TO-247AC |
| RoHS | RoHS |
| Part Status | Active |
Application & Notes
IRFP048NPBF by Rochester Electronics, LLC is an N-channel power MOSFET rated at 55 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-247-3 package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 16mOhm @ 37A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.
📖 Technical Guides for IRFP048NPBF
Alternatives & Replacements
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MOSFET N-CH 650V 11A TO247-3
HUFA75344G3
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FCH077N65F-F085
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FCH072N60F
MOSFET N-CH 600V 52A TO247-3
IRFP150NPBF
MOSFET N-CH 100V 42A TO247AC
All Technical Specifications
| FET Type | N-Channel |
| Vgs (Max) | ±20V |
| Technology | MOSFET (Metal Oxide) |
| Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 16mOhm @ 37A, 10V |
| Power Dissipation (Max) | 140W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 89 nC @ 10 V |
| Drain to Source Voltage (Vdss) | 55 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1900 pF @ 25 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25°C | 64A (Tc) |
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