What is the minimum order quantity for TP0620N3-G?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 1 pcs.

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Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

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Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for TP0620N3-G?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for TP0620N3-G?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Microchip TechnologyTO-226-3, TO-92-3 (TO-226AA)RoHS

TP0620N3-G

Name: TP0620N3-G
Brand: Microchip Technology
SKU: TP0620N3-G
Price: 1.79 USD
Availability: InStock

MOSFET P-CH 200V 175MA TO92-3

Parameters

Parameter	Value
Brand	Microchip Technology
Model	TP0620N3-G
Package / Case	TO-226-3, TO-92-3 (TO-226AA)
Mounting Type	Through Hole
Operating Temperature	-55°C ~ 150°C (TJ)
FET Type	P-Channel
Drain to Source Voltage (Vdss)	200 V
Rds On (Max)	12Ohm @ 200mA, 10V
Vgs(th) (Max)	2.4V @ 1mA
Input Capacitance (Ciss)	150 pF @ 25 V
Power Dissipation (Max)	1W (Ta)
Drive Voltage	5V, 10V
Supplier Device Package	TO-92-3
RoHS	RoHS
Part Status	Active

Application & Notes

TP0620N3-G by Microchip Technology is an N-channel power MOSFET rated at 200 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-226-3, TO-92-3 (TO-226AA) package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 12Ohm @ 200mA, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	P-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2.4V @ 1mA
Rds On (Max) @ Id, Vgs	12Ohm @ 200mA, 10V
Power Dissipation (Max)	1W (Ta)
Drain to Source Voltage (Vdss)	200 V
Input Capacitance (Ciss) (Max) @ Vds	150 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V
Current - Continuous Drain (Id) @ 25°C	175mA (Tj)

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