PC
Vishay SiliconixTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

SUM90N08-7M6P-E3

MOSFET N-CH 75V 90A TO263

SUM90N08-7M6P-E3 by Vishay Siliconix
Subcategory

Transistors Fets Mosfets Single

Package

TO-263-3, D²Pak (2 Leads + Tab), TO-263AB

Series

TrenchFET®

Status

Obsolete

Price available on request

MOQ: 1 pcs

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Parameters

ParameterValue
BrandVishay Siliconix
ModelSUM90N08-7M6P-E3
Package / CaseTO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting TypeSurface Mount
Operating Temperature-55°C ~ 175°C (TJ)
FET TypeN-Channel
Drain to Source Voltage (Vdss)75 V
Rds On (Max)7.6mOhm @ 30A, 10V
Vgs(th) (Max)4.8V @ 250µA
Gate Charge (Qg)90 nC @ 10 V
Input Capacitance (Ciss)3528 pF @ 30 V
Power Dissipation (Max)3.75W (Ta), 150W (Tc)
Drive Voltage10V
Supplier Device PackageTO-263 (D²Pak)
RoHSRoHS
Part StatusObsolete

Application & Notes

SUM90N08-7M6P-E3 by Vishay Siliconix is an N-channel power MOSFET rated at 75 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 7.6mOhm @ 30A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

All Technical Specifications

FET TypeN-Channel
Vgs (Max)±20V
TechnologyMOSFET (Metal Oxide)
Vgs(th) (Max) @ Id4.8V @ 250µA
Rds On (Max) @ Id, Vgs7.6mOhm @ 30A, 10V
Power Dissipation (Max)3.75W (Ta), 150W (Tc)
Gate Charge (Qg) (Max) @ Vgs90 nC @ 10 V
Drain to Source Voltage (Vdss)75 V
Input Capacitance (Ciss) (Max) @ Vds3528 pF @ 30 V
Drive Voltage (Max Rds On, Min Rds On)10V
Current - Continuous Drain (Id) @ 25°C90A (Tc)

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