What is the minimum order quantity for SPB80N03S2L-05?

MOQ varies by availability. Contact us with your required quantity — we support small-batch and prototype orders. Typical MOQ starts from 866 pcs.

How long does shipping take for SPB80N03S2L-05?

Standard delivery: 3–7 business days via DHL/FedEx/UPS. We ship from Shenzhen, China to worldwide destinations. Express and economy options available.

Are your electronic components genuine and authentic?

Yes. All components are sourced from authorized distributors and verified suppliers. Each batch is inspected before shipping. We guarantee 100% authentic, brand-new parts.

Can I get a datasheet for SPB80N03S2L-05?

Yes, the datasheet is available. Visit the product page and click the datasheet link, or contact us and we will send it to you directly.

Do you offer samples or prototype quantities for SPB80N03S2L-05?

Yes, we support sample and prototype orders. Tell us your project requirements (quantity, timeline, target price) and we will prepare a tailored quote — usually within 24 hours.

Infineon TechnologiesTO-263-3, D²Pak (2 Leads + Tab), TO-263ABRoHS

SPB80N03S2L-05

Name: SPB80N03S2L-05
Brand: Infineon Technologies
SKU: SPB80N03S2L-05
Price: 0.35 USD
Availability: InStock

MOSFET N-CH 30V 80A TO263-3

Parameters

Parameter	Value
Brand	Infineon Technologies
Model	SPB80N03S2L-05
Package / Case	TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Mounting Type	Surface Mount
Operating Temperature	-55°C ~ 175°C (TJ)
FET Type	N-Channel
Drain to Source Voltage (Vdss)	30 V
Rds On (Max)	4.9mOhm @ 55A, 10V
Vgs(th) (Max)	2V @ 110µA
Gate Charge (Qg)	89.7 nC @ 10 V
Input Capacitance (Ciss)	3320 pF @ 25 V
Power Dissipation (Max)	167W (Tc)
Drive Voltage	4.5V, 10V
Supplier Device Package	PG-TO263-3-2
RoHS	RoHS
Part Status	Obsolete

Application & Notes

SPB80N03S2L-05 by Infineon Technologies is an N-channel power MOSFET rated at 30 V / N/A, commonly used in DC-DC converters, motor drivers, power supplies, and battery protection circuits. The TO-263-3, D²Pak (2 Leads + Tab), TO-263AB package offers good thermal performance for SMT mounting. Key spec: Rds(on) max 4.9mOhm @ 55A, 10V. Select gate driver voltage carefully — logic-level variants exist for direct MCU drive.

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All Technical Specifications

FET Type	N-Channel
Vgs (Max)	±20V
Technology	MOSFET (Metal Oxide)
Vgs(th) (Max) @ Id	2V @ 110µA
Rds On (Max) @ Id, Vgs	4.9mOhm @ 55A, 10V
Power Dissipation (Max)	167W (Tc)
Gate Charge (Qg) (Max) @ Vgs	89.7 nC @ 10 V
Drain to Source Voltage (Vdss)	30 V
Input Capacitance (Ciss) (Max) @ Vds	3320 pF @ 25 V
Drive Voltage (Max Rds On, Min Rds On)	4.5V, 10V
Current - Continuous Drain (Id) @ 25°C	80A (Tc)

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